Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010
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Nanotech 2010 Vol. 2
Chapter 11: Compact Modeling
Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects
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| Authors: | J. Dura, S. Martinie, D. Munteanu, M.-A. Jaud, S. Barraud, J.L. Autran |
| Affiliation: | CEA-LETI Minatec, FR |
| Pages: | 801 - 804 |
| Keywords: | nanowire, quantum confinement, compact model |
| Abstract: | The particular shape of Gate-All-Around (GAA) nanowires allows a much higher electrostatic control of the active region than conventional devices, as required for the integration at the end-of-roadmap. This architecture is suitable for ultra-scaled devices with ultra-thin and short channels involving new physical phenomena such as silicon band structure variation. In this paper, we propose an analytical model of the threshold voltage in GAA Silicon NanoWire including quantum confinement, Short Channel Effects (SCE) and band structure effects. The model has been compared to numerical simulations (Schrödinger-Poisson (SP) solver for quantum effects and atomistic simulation for the band structure effects). |
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