Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010

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	Nanotech 2010 Vol. 2 Chapter 11: Compact Modeling Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices
Authors:	H. Abebe, E. Cumberbatch, S. Uno, V. Tyree
Affiliation:	USC/ISI, US
Pages:	773 - 776
Keywords:	circuit simulation, compact device modeling, MOSFET, SPICE
Abstract:	The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation across the device is assumed. Our compact models are compared with the 2-D numerical data from Sentaurus and give excellent results.
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