Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010
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Nanotech 2010 Vol. 2
Chapter 11: Compact Modeling
Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application
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| Authors: | W. Feldman, E. Cumberbatch, H. Abebe |
| Affiliation: | USC/ISI, US |
| Pages: | 813 - 816 |
| Keywords: | circuit simulation, compact device modeling, MOSFET, SPICE |
| Abstract: | Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive an improved approximation to the energy band levels in single-gate MOSFET’s. The exact analytical solution to Schrodinger’s equation is known for this type of potential. Asymptotic approximations to the wave functions are used to find accurate compact formulae for the exact energy levels. These formulae agree closely with exact numerical results (SCHRED) providing improvements over the energy band levels derived from Stern’s traditional triangular approximation to the potential. |
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