Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010
Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010

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Carboxylation of Boron- and Nitrogen-Doped Graphene and Carbon Nanotubes: First Principles Study
Nanotech 2010 Vol. 2

Chapter 10: Computational Methods, Simulation & Software Tools

Carboxylation of Boron- and Nitrogen-Doped Graphene and Carbon Nanotubes: First Principles Study

Authors:N. Al-Aqtash, I. Vasiliev
Affiliation:New Mexico State University, US
Pages:729 - 732
Keywords:functionalization, B-doping, N-doping, surface point defects
Abstract:We study the mechanism of covalent functionalization of boron (B) and nitrogen (N) doped graphene and carbon nanotubes by carboxyl (COOH) groups. Our calculations are carried out using density functional theory combined with the generalized gradient approximation for the exchangecorrelation functional. The binding energies and equilibrium geometries of carboxylated B/N-doped graphene sheets and carbon nanotubes are examined in cases of graphene and carbon nanotubes containing no defects, containing Stone-Wales defects, and containing vacancies. Our calculations show that B-doping increases and N-doping decreases the binding energy of COOH groups to defect-free and defective graphene and carbon nanotubes. This result is consistent with previous observations that carbon nanotubes and graphene act as electron acceptors with respect to COOH groups.
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