Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010
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Nanotech 2010 Vol. 2
Chapter 6: MEMS & NEMS Devices
Preparation of functional PZT films on 6” and 8” silicon wafers by high rate sputtering
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| Authors: | R. Dudde, D. Kaden, H.-J. Quenzer, B. Wagner |
| Affiliation: | Fraunhofer ISIT, DE |
| Pages: | 348 - 351 |
| Keywords: | PZT, thin film sputtering, MEMS actuators |
| Abstract: | Crack and void free polycrystalline PZT films in the range of 2 µm to 6 µm have been successfully deposited on silicon wafers using a novel high rate gas flow sputtering process. The development of a process for uniform deposition of high quality piezoelectric materials on wafer scale will drastically lower the costs of actuator integration into new MEMS devices. The sputtered PZT layers show a high dielectric constant Er of 2000 and a distinct ferroelectric hysteresis loop with a remnant polarisation of 17 µC/cm2 and a coercive field strength of 5.4 kV/mm. Piezoelectric coefficients d33,f of 102 to 108pm/V have been determined using a standard aixACCT. A transverse piezoelectric module e31 = -10.9 C/m2 was measured. |
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