Technical Proceedings of the 2010 NSTI Nanotechnology Conference & Expo - Nanotech 2010
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Nanotech 2010 Vol. 2
Chapter 10: Computational Methods, Simulation & Software Tools
Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET
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| Authors: | P. Malik, R. Chajaur, M. Gupta, R.S. Gupta |
| Affiliation: | Semiconductor Devices Research Laboratory, IN |
| Pages: | 701 - 704 |
| Keywords: | ATLAS-3D, corner effect, DEVEDIT-3D, NJD, RF, TRC MOSFET |
| Abstract: | In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS and DEVEDIT. Further, the influence of technology parameter variations such as negative junction depth (NJD), substrate doping and workfunction difference has been investigated for the proposed GME-TRC MOSFET. The simulation study reveals that GME-TRC MOSFET exhibits superior performance in terms of cut-off frequency, maximum unilateral power gain (MUG), maximum available power gain (Gma) and intrinsic delay and thus the result offers the opportunity for realizing the reliability of GME-TRC MOSFET for high speed logic and RF applications. |
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